Datasheet > MSB709-RT1

MSB709-RT1

更新时间： 2024-11-20 22:26:15

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管光电二极管
页数	文件大小	规格书
1页	41K
描述
PNP General Purpose Amplifier Transistor Surface Mount

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中文翻译

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技术参数
数据手册

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MSB709-RT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.28
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	210	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MSB709-RT1 数据手册

LESHAN RADIO COMPANY, LTD.

PNP General Purpose Amplifier

Transistor Surface Mount

MSB709-RT1

COLLECTOR

CASE 318D–03, STYLE1

SC–59

BASE

EMITTER

MAXIMUM RATINGS (T _A= 25 °C)

Rating

Symbol

V _(BR)CBO

V _(BR)CEO

V _(BR)EBO

I _C

Value

–60

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

–45

Vdc

–7.0

–100

–200

Vdc

Collector Current - Continuous

Collector Current - Peak

THERMALCHARACTERISTICS

Characteristic

mAdc

I_C(P)

Symbol

P_D

Max

200

Unit

°C

Power Dissipation

Junction Temperature

Storage Temperature

T _J

150

T_stg

–55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C)

Characteristic

Symbol

Min

–45

–60

–7.0

—

Max

—

Unit

Vdc

Collector-Emitter Breakdown Voltage (I_C=–2.0mAdc,I_B=0)

Collector-Base Breakdown Voltage (I_C=–10µAdc,I_E=0)

Emitter-Base Breakdown Voltage (I_E=–10µAdc,I_E=0)

Collector-Base Cutoff Current (V_CB=–45Vdc, I_E=0)

Collector-Emitter Cutoff Current (V_CE=–10Vdc, I_B=0)

DC Current Gain⁽¹⁾

V _(BR)CEO

V_(BR)CBO

V _(BR)EBO

I_CBO

—

Vdc

—

–0.1

–100

µAdc

nAdc

I_CEO

—

h_FE1

210

—

340

—

(V_CE=–10Vdc, I_C= –2.0mAdc)

Collector-Emitter Saturation Voltage

V_CE(sat)

–0.5

Vdc

(I_C= –100mAdc, I_B=–10mAdc)

1. Pulse Test: Pulse Width 300 µs, D.C.

2%.

DEVICE MARKING

Marking Symbol

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

N2–1/1

中文翻译

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