Datasheet > MSB30M??

MSB30M??

更新时间： 2024-09-18 18:04:47

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	737K
描述
UMSB

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中文翻译

获取价格

数据手册

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MSB30M?? 数据手册

MSB30D THRU MSB30M

Voltage Range - 200 to 1000 Volts Current - 3.0 Ampere

GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS

Features

UMSB

Glass Passivated Chip Junction

Reverse Voltage - 200 to 1000 V

Forward Current- 3 A



.276(7.00)

.244(6.20)

.209(5.30)

.193(4.90)

.049(1.25)

.037(0.95)

.045(1.15)

.037(0.95)

(depth:0.02~0.08)

(? 0.8±0.03)

(Pin1)

(1)

(2)



High Surge Current Capability

Designed for Surface Mount Application

(3)

(4)

Bottom View

Top Viev

Mechanical Data

（2）

（1）

Cas e : JEDEC UMSB molded plastic body

Terminals : Solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Pos ition : Any

.122(3.10)

.114(2.90)

（3）

（4）

Weight

: 0.00825 ounce, 0.234 grams

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

MSB30D

MSB30G

MSB30J

MSB30K

MSB30M

Units

Symbols

MDD

Marking Code

MB30D

MB30G

MB30J

MB30K

MB30M

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

400

280

400

600

420

600

1000

700

200

140

200

800

560

800

Maximum DC Blocking Voltage

1000

I_F(AV)

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

V_F

1.1

Maximum Forward Voltage at 3.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@T_a=25 °C

100

μA

I_R

@T_a=125 °C

Typical Junction Capacitance（Note1）

C_j

R_θJA

R_θJC

R_θJL

Typical Thermal Resistance（Note2）

°C/W

°C

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.

2. P.C.B. mounted with 4×1.5"×1.5"（3.81×3.81 cm）copper pad areas.

DN:21315A0

http://www.microdiode.com

Rev:2021A1

Page :1

中文翻译

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