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MSB1218ART1 PDF预览

MSB1218ART1

更新时间: 2024-11-24 22:29:51
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摩托罗拉 - MOTOROLA 晶体放大器晶体管
页数 文件大小 规格书
6页 159K
描述
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MSB1218ART1 数据手册

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Order this document  
by MSB1218A–RT1/D  
SEMICONDUCTOR TECHNICAL DATA  
This PNP Silicon Epitaxial Planar Transistor is designed for general purpose  
amplifier applications. This device is housed in the SC–70/SOT–323 package  
which is designed for low power surface mount applications.  
COLLECTOR  
Motorola Preferred Devices  
High h , 210460  
FE  
3
PNP GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
Low V  
, < 0.5 V  
CE(sat)  
Available in 8 mm, 7–inch/3000 Unit Tape and Reel  
SURFACE MOUNT  
1
2
3
BASE  
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
1
2
Rating  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
V
(BR)CBO  
CASE 419–02, STYLE 3  
SC–70/SOT–323  
45  
Vdc  
(BR)CEO  
V
7.0  
Vdc  
(BR)EBO  
Collector Current — Continuous  
Collector Current — Peak  
DEVICE MARKING  
I
100  
200  
mAdc  
mAdc  
C
I
C(P)  
MSB1218A–RT1 = BR  
MSB1218A–ST1 = BS  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
150  
150  
Unit  
mW  
°C  
(1)  
Power Dissipation  
P
D
Junction Temperature  
T
J
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS  
T
stg  
55 ~ +150  
°C  
Characteristic  
Collector–Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0)  
Symbol  
Min  
45  
45  
7.0  
Max  
Unit  
V
V
V
Vdc  
Vdc  
Vdc  
µA  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 10 µAdc, I = 0)  
C
E
Emitter–Base Breakdown Voltage (I = 10 µAdc, I = 0)  
E
E
Collector–Base Cutoff Current (V  
CB  
= 20 Vdc, I = 0)  
I
0.1  
100  
E
CBO  
CEO  
Collector–Emitter Cutoff Current (V  
CE  
= 10 Vdc, I = 0)  
I
µA  
B
(2)  
DC Current Gain  
h
FE1  
(V = 10 Vdc, I = 2.0 mAdc)  
MSB1218A–RT1  
MSB1218A–ST1  
210  
290  
340  
460  
CE  
C
(2)  
Collector–Emitter Saturation Voltage  
V
0.5  
Vdc  
CE(sat)  
(I = 100 mAdc, I = 10 mAdc)  
C
B
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. Pulse Test: Pulse Width 300 µs, D.C. 2%.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  

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