Datasheet > MS3N100HGC0

MS3N100HGC0

更新时间： 2024-06-27 12:12:25

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
6页	2915K
描述
TO-247

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中文翻译

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数据手册

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MS3N100HGC0 数据手册

MS3N100HGC0/D0/T1/D1

N-channel 1000V – 5.2Ω - 3A

features



Low gate charge (typical 12nC)

Low Crss (typical 5.5pF)

100% avalanche tested

Fast switching

Improved dv/dt capability

Applications



Switching application

Electrical ratings

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Drain-source voltage（V_GS=0)

Gate-source voltage

V_DS

V_GS

I_D

1000

±30

Drain current（continuous）at TC=25℃

Drain current（continuous）at TC=100℃

Drain current（pulsed）

I_D

2.1

I_DM

Avalanche current repetitive or

not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

300

272

(starting Tj=25℃ Id=lar Vdd=50V)

Total dissipation at TC=25℃(TO-247)

Total dissipation at TC=25℃

(TO-252/TO-251)

Drain source ESD

V_ESD(GS)

dv/dt

4000

4.5

(HBM-C=100pF,R=1.5KΩ）

Peak diode recovery voltage slope

V/ns

Insulation withstand voltage(RMS)from all

three leads to external heat sink

(t=1s TC=25℃）

V_ISO

2500

Operating junction temperature

Storage temperature

T_J

-55 to 175

℃

T_STG

H1.03

Maspower

12 3 4 5 6

中文翻译

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