Datasheet > MS2TH32065G1

MS2TH32065G1

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
5页	741K
描述
TO-247-3L

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中文翻译

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数据手册

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MS2TH32065G1 数据手册

MS2H32065G1

650V Silicon Carbide Diode

Features

Benefits

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-650-Volt Schottky Rectifier

-Shorter recovery time

-High-speed switching possible

-High-Frequency Operation

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Positive Temperature Coefficient on VF

Applications

Package

-Switch Mode Power Supplies

-Power Factor Correction

-Motor Drives

Type : TO-247-3Lead

-PD Power

-Charging Pile Power

-PV Inverter

PIN 1

PIN 2

CASE

PIN 3

C A

Absolute Maximum Ratings

T_C= 25 ℃ unless otherwise noted

Symbol

Parameter

MS2H32065G1

Units

VRRM

Repetitive Peak Reverse Voltage

650

VRSM

VDC

Surge Peak Reverse Voltage

DC Blocking Voltage

650

Continuous Forward Current

(Per Leg/ Per Device) @Tc=150 ℃

16 / 32

105

Repetitive Peak Forward Surge Current

IFRM

@TC=25

Non-Repetitive Peak Forward Surge Current

@TC=25 C, tP = 10 ms, Half Sine Wave

Non-Repetitive Peak Forward Surge Current ;@TC=25˚C, tP= 10 μs, Pulse

̊C, tP = 10 ms, Half Sine Wave

135

IFSM

1200

IF,Max

159

Power Dissipation

(Per Leg/Device)

@Tc=25℃

@Tc=110℃

Ptot

TJ , Tstg

Operating Junction and Storage Temperature

-55 to +175

̊ C

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2020

12 3 4 5

中文翻译

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