Datasheet > MS2N3660

MS2N3660

更新时间： 2024-11-21 18:10:03

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
4页	519K
描述
SOP-8

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数据手册

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MS2N3660 数据手册

2N3660

60V Dual N-Channel MOSFET

General Description

Product Summary

(V) = 60V

The 2N3660 uses advanced trench technology to

provide excellent R

and low gate charge. As a pair

I = 4.5A

(V = 10V)

DS(ON)

<75m (V

= 10V)

these MOSFETs operate very efficiently in Push Pull

and Bridge topologies.

DS(ON)

<95m (V

= 4.5V)

DS(ON)

100% UIS Tested

100% Rg Tested

Top View

Absolute Maximum Ratings T =25°C unless otherwise noted

Maximum

Parameter

Symbol

10 Sec

Units

Steady State

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

±20

T =25°C

4.5

3.5

Current

T =70°C

Pulsed Drain Current

T =25°C

1.8

1.2

T =70°C

Power Dissipation

Avalanche Current

1.8

Repetitive avalanche energy 0.3mH

10.6

T^A,^RT

STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient

62.5

t ≤ 10s



Maximum Junction-to-Ambient

Steady-State

Maximum Junction-to-Lead

JL

°C/W

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