Datasheet > MS2H40120G1

MS2H40120G1

更新时间： 2024-11-19 18:09:39

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
5页	682K
描述
TO-247-3L

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中文翻译

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数据手册

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MS2H40120G1 数据手册

MS2H40120G1

1200V Silicon Carbide Diode

Features

Benefits

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-1200-Volt Schottky Rectifier

-Shorter recovery time

-High-speed switching possible

-High-Frequency Operation

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Positive Temperature Coefficient on VF

Applications

Package

-Switch Mode Power Supplies

-Power Factor Correction

-Motor Drives

Type : TO-247-3Lead

-Charging Pile Power

PIN 1

PIN 2

PIN 3

C A

Absolute Maximum Ratings

T_C= 25 ℃ unless otherwise noted

Symbol

Parameter

MS2H40120G1

Units

VRRM

Repetitive Peak Reverse Voltage

1200

VRSM

VDC

Surge Peak Reverse Voltage

DC Blocking Voltage

1200

Continuous Forward Current @Tc=25℃

@Tc=125℃

@Tc=137℃

Repetitive Peak Forward Surge Current

(Per Leg)

@TC=25 C̊ , tP = 10 ms, Half Sine Wave,D=0.3

100

IFRM

Non-Repetitive Peak Forward Surge Current

(Per Leg)

140

120

IFSM

@TC=25

̊C, tP = 10 ms, Half Sine Wave,D=0.3

IF,Max

Non-Repetitive Peak Forward Surge Current ;@TC=25˚C, tP= 10 μs, Pulse

283

123

Power Dissipation

(Per Leg/Device)

@Tc=25℃

@Tc=110℃

Ptot

TJ , Tstg

Operating Junction and Storage Temperature

-55 to +175

̊ C

Rev1.0 Oct . 2019

Msemitek Co., Ltd

http://www.msemitek.com

12 3 4 5

中文翻译

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