Datasheet > MS2H40065G1

MS2H40065G1

更新时间： 2024-11-18 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
3页	524K
描述
TO-247

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中文翻译

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数据手册

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MS2H40065G1 数据手册

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MS2H40065G1

650V Silicon Carbide Diode

Features

Benefits

-Higher safety margin against overvoltage

-Improved efficiency all load conditions

-650-Volt Schottky Rectifier

-Shorter recovery time

-Increased efficiency compared to Silicon Diode alternatives

-Reduction of Heat Sink Requirements

-High-speed switching possible

-High-Frequency Operation

-Parallel Devices Without Thermal Runaway

-Essentialy No Switching Losses

-Temperature-Independent Switching Behavior

-Extremely Fast Switching

-Positive Temperature Coefficient on VF

Package

Applications

-Switch Mode Power Supplies

-Power Factor Correction

-Motor Drives

Type : TO-247-3Lead

-HID Lighting

Absolute Maximum Ratings

T_C= 25 ℃ unless otherwise noted

Symbol

Parameter

MS2H40065G1

Units

VRRM

Repetitive Peak Reverse Voltage

650

VRSM

VDC

Surge Peak Reverse Voltage

DC Blocking Voltage

650

Continuous Forward Current @Tc=150℃

20*/40

140

(Per Leg/Device)

Repetitive Peak Forward Surge Current

(Per Leg)

@TC=25 C̊ , tP = 10 ms, Half Sine Wave

IFRM

IFSM

Non-Repetitive Peak Forward Surge Current

(Per Leg)

@TC=25 C̊ , tP = 10 ms, Half Sine Wave

170

Non-Repetitive Peak Forward Surge Current

@TC=25 C, tP = 10 us, Pulse

1360

IF,MAX

159

Power Dissipation

@Tc=25℃

@Tc=110℃

Ptot

TJ , Tstg

Operating Junction and Storage Temperature

-55 to +175

̊ C

page1

Rev1.0 October . 2019

MAPLE SEMICONDUCTOR Co.,Ltd

http://www.Maplesemi.com

12 3

中文翻译

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