MS2H32120G1 PDF预览

MS2H32120G1

更新时间: 2025-07-20 18:09:59
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
5页 723K
描述
TO-247-3L

MS2H32120G1 数据手册

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MS2H32120G1  
1200V Silicon Carbide Diode  
Features  
Benefits  
-Higher safety margin against overvoltage  
-Improved efficiency all load conditions  
-Increased efficiency compared to Silicon Diode alternatives  
-Reduction of Heat Sink Requirements  
-1200-Volt Schottky Rectifier  
-Shorter recovery time  
-High-speed switching possible  
-High-Frequency Operation  
-Parallel Devices Without Thermal Runaway  
-Essentialy No Switching Losses  
-Temperature-Independent Switching Behavior  
-Extremely Fast Switching  
-Positive Temperature Coefficient on VF  
Package  
Applications  
-Switch Mode Power Supplies  
-Power Factor Correction  
-Motor Drives  
Type : TO-247-3Lead  
-HID Lighting  
PIN 1  
PIN 2  
PIN 3  
A
C A  
Absolute Maximum Ratings  
TC = 25 unless otherwise noted  
Symbol  
Parameter  
MS2H32120G1  
Units  
VRRM  
Repetitive Peak Reverse Voltage  
1200  
V
VRSM  
VDC  
Surge Peak Reverse Voltage  
DC Blocking Voltage  
1200  
1200  
16  
V
V
IF  
Continuous Forward Current @Tc=150  
A
A
Repetitive Peak Forward Surge Current  
(Per Leg)  
80  
IFRM  
@TC=25 C̊ , tP = 10 ms, Half Sine Wave  
Non-Repetitive Peak Forward Surge Current  
(Per Leg)  
120  
IFSM  
A
@TC=25 C̊ , tP = 10 ms, Half Sine Wave  
283  
122  
Power Dissipation  
(Per Leg/Device)  
@Tc=25℃  
@Tc=110℃  
Ptot  
W
TJ , Tstg  
Operating Junction and Storage Temperature  
-55 to +175  
̊ C  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.0 Oct . 2019  

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