Datasheet > MS24N20FDT

MS24N20FDT

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
7页	2930K
描述
TO-220

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中文翻译

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数据手册

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MS24N20FDT 数据手册

MS24N20FDE/T

SGT process (deep groove process) NMOS

Features

 V_DS=200V,I_D=24A

R_DS(ON)<80mΩ @ V_GS=10V (Typ:64mΩ )

 High density cell design

for ultra low Rdson

 Fully characterized

avalanche voltage and current

 Good stability and

uniformity with high EAS

 Excellent package for

good heat dissipation

 Special process technology

for high ESD capability

Applications

 Power switching application

 Hard switched and high frequency circuits

 UPS

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DSS

200

I_D，T=25℃

T=100℃

Drain Current -continuous

Drain Current - pulse

Gate-Source Voltage

I_DM

100

±20

V_GSS

Single Pulsed Avalanche Energy

E_AS

250

（note 5）

150

Power Dissipation

TC=25℃

0.47

W/℃

Operating and Storage Temperature

Range

Tj,T_STG

-55~+175

℃

*Drain current limited by maximum junction temperature

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

Parameter

Symbol Tests conditions Min Type Max Units

Off-Characteristics

Drain-Source Voltage BV_DSS

I_D=250uA,V_GS=0V

200 220

H1.01

Maspower

12 3 4 5 6 7

中文翻译

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