Datasheet > MS2213

MS2213

更新时间： 2024-11-21 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	185K
描述
RF & MICROWAVE TRANSISTORS AVIONICS/JTIDS APPLICATIONS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MS2213 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, S-CDFM-F2
Reach Compliance Code：	unknown	风险等级：	5.82
其他特性：	HIGH RELIABILITY	外壳连接：	BASE
最大集电极电流 (IC)：	3.5 A	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	S-CDFM-F2
元件数量：	1	端子数量：	2
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	SQUARE
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON

MS2213 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2213

RF & MICROWAVE TRANSISTORS

AVIONICS/JTIDS APPLICATIONS

Features

960-1215 MHz

COMMON BASE

GOLD METALLIZATION

HERMETIC PACKAGE

CLASS C OPERATION

POUT = 30 W MIN. WITH 7.8 dB GAIN

DESCRIPTION:

The MS2213 is a silicon NPN bipolar device specifically designed

for JTIDS pulsed power applications from 960-1215 MHz.

Gold metallization and emitter ballasting assure high reliability

under Class C amplifier operation. This device operates over a

wide range of pulse widths, duty cycles and temperatures, and

can withstand a 15:1 VSWR mismatch under load.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CC

Parameter

Value

Unit

Collector-Supply Voltage

I_C

Device Current

3.5

P_DISS

T_J

Power Dissipation

Junction Temperature (RF Pulsed Operation)

Storage Temperature

+250

°C

T_STG

-65 to +200

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance

2.2

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

12 3 4 5

中文翻译

下载PDF

与MS2213相关器件

型号	品牌	获取价格	描述	数据表
MS2214	ADPOW	获取价格	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
MS-22-140	ETC	获取价格	High-Speed Interconnect Technology
MS-22-140-Y	ETC	获取价格	High-Speed Interconnect Technology
MS2215	CIT	获取价格	CIT SWITCH
MS2215	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
MS2215L3	CIT	获取价格	CIT SWITCH
MS2215L6	CIT	获取价格	CIT SWITCH
MS2216	MICROSEMI	获取价格	Transistor
MS2217	ADPOW	获取价格	RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 X 0.310 INCH, HERMETIC
MS2218	ADPOW	获取价格	RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC