Datasheet > MS2205

MS2205

更新时间： 2024-11-18 03:48:23

品牌	Logo	应用领域
ADPOW		晶体射频和微波晶体管电子放大器航空局域网
页数	文件大小	规格书
3页	96K
描述
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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数据手册

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MS2205 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS2205

RF AND MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

DESIGNED FOR HIGH POWER PULSED IFF, DME,

TACAN APPLICATIONS

6.0 W (typ.) IFF 1030–1090 MHz

5.0 W (min.) DME 1025–1150 MHz

4.0 W (typ.) TACAN 960–1215 MHz

GAIN

9 dB (typ.)

VSWR ¥ :1 AT RATED CONDITIONS

LOW THERMAL RESISTANCE

EMITTER BALLASTED

INPUT MATCHED COMMON-BASE CONFIGURATION

DESCRIPTION:

The MS2205 is a gold metallized, silicon NPN power transistor

designed for pulsed applications with low duty cycles, such as

IFF, DME, and TACAN. It can withstand infinite VSWR under rated

conditions. The MS2205 is housed in the .250" input-matched

stripline package, resulting in improved broadband performance

and low thermal resistance.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current*

3.5

1.0

P_DISS

T_j

21.9

+200

°C

Total Power Dissipation*

Junction Temperature

Storage Temperature

(T_C= °C)

T_stg

-65 to +150

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance*

8.0

°C/W

*Applies only to rated RF amplifier operation

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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