Datasheet > MS2203

MS2203

更新时间： 2024-02-14 10:41:42

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	104K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MS2203 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.84

MS2203 数据手册

MS2203

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Features

•

1090 MHz

18 VOLTS

P_OUT= 0.6 WATTS

G_P= 10.8 dB MINIMUM

CLASS A OPERATION

INFINITE VSWR CAPABILITY @ RATED CONDITIONS

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS2203 is a common emitter, silicon NPN, microwave

transistor designed for Class A driver applications under

DME or IFF pulse conditions. This device is capable of

withstanding an infinite load VSWR at any phase angle

under rated conditions.

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CE

I_C

Parameter

Value

Unit

Collector-Emitter

Collector Current

300

P_D

Total Device Dissipation

Junction Temperature

T_J

200

°C

Storage Temperature Range

-65 + 150

T_stg

Thermal Data

R_TH(J-C)

Thermal Resistance Junction-case

°C/W

Rev A January 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Visit our website at www.microsemi.com or contact our factory direct.

12 3 4 5

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