MS1642P

更新时间： 2024-09-25 05:50:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管射频微波
页数	文件大小	规格书
3页	50K
描述
RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

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数据手册

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MS1642P 数据手册

MS1642P

RF & MICROWAVE TRANSISTORS

VHF, UHF GENERAL PURPOSE

Features

•

400 MHz

GOLD METALLIZATION

P_OUT= 10 W MINIMUM

G_P= 12 dB MINIMUM

INFINITE VSWR CAPABILITY

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1642 is a gold metallized silicon NPN transistor

designed for general purpose amplifier applications in

the VHF and UHF frequency bands. Diffused emitter

ballast resistors and computer controlled wirebonding

techniques ensure maximum device reliability and

consistency.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

P_DISS

Parameter

Value

Unit

Power Dissipation*

Device Current*

I_C(max)

1.5

T_STG

V_CBO

V_CEO

V_EBO

Storage Temperature

-65 to +150

ºC

Collector – Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

4.0

Thermal Data

R_TH(J-C)

Thermal Resistance Junction-case

6.4

°C/W

*Applies only to rated RF amplifier operation

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

12 3

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