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MS1533 PDF预览

MS1533

更新时间: 2024-11-18 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管电视射频微波放大器局域网
页数 文件大小 规格书
3页 94K
描述
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

MS1533 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PDFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64外壳连接:EMITTER
最大集电极电流 (IC):25 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDFM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1533 数据手册

 浏览型号MS1533的Datasheet PDF文件第2页浏览型号MS1533的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1533  
RF & MICROWAVE TRANSISTORS  
TV/LINEAR APPLICATIONS  
Features  
·
·
·
·
·
·
·
470 - 860 MHz  
28 VOLTS  
INTERNAL INPUT MATCHING  
CLASS AB LINEAR  
POUT = 150 WATTS  
GP = 6.5 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1533 is a gold metallized epitaxial silicon NPN planar  
transistor designed for high linearity Class AB operation in UHF  
and Band IV, V television transmitters and transposers.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
60  
VEBO  
VCEO  
PDISS  
IC  
Emitter-Base Voltage  
Collector-Emitter Voltage  
Power Dissipation  
3.0  
30  
310  
25  
V
V
W
A
Device Current  
TJ  
Junction Temperature  
Storage Temperature  
+200  
°C  
°C  
TSTG  
-65 to +150  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
.55  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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