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MS1512 PDF预览

MS1512

更新时间: 2024-11-02 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管电视射频微波
页数 文件大小 规格书
3页 97K
描述
RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

MS1512 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64其他特性:HIGH RELIABILITY
最大集电极电流 (IC):1.2 A基于收集器的最大容量:7 pF
集电极-发射极最大电压:25 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PRPM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1512 数据手册

 浏览型号MS1512的Datasheet PDF文件第2页浏览型号MS1512的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1512  
RF & MICROWAVE TRANSISTORS  
UHF TV/LINEAR APPLICATIONS  
Features  
·
·
·
·
·
·
860 MHz  
20 VOLTS  
CLASS A LINEAR OPERATION  
P
OUT = 1.0 WATT  
GP = 10.0 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1512 is a silicon NPN bipolar transistor designed for  
UHF linear applications, specifically TV Bands IV and V. The  
MS1512 is characterized for high linearity, Class A operation.  
Device ruggedness and reliability are maximized with emitter  
ballasting and gold metallization.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
45  
25  
3.5  
Unit  
Collector-Base Voltage  
V
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
1.2  
A
PDISS  
TJ  
Power Dissipation  
Junction Temperature  
Storage Temperature  
19.4  
+200  
W
°C  
°C  
TSTG  
-65 to +150  
Thermal Data  
RTH(J-C)  
Junction-case Thermal Resistance  
9.0  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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