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MS1511 PDF预览

MS1511

更新时间: 2024-11-21 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波通信
页数 文件大小 规格书
3页 98K
描述
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

MS1511 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-PXFM-F6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64最大集电极电流 (IC):8 A
基于收集器的最大容量:80 pF集电极-发射极最大电压:30 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-PXFM-F6元件数量:1
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MS1511 数据手册

 浏览型号MS1511的Datasheet PDF文件第2页浏览型号MS1511的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1511  
RF & MICROWAVE TRANSISTORS  
UHF COMMUNICATIONS APPLICATIONS  
Features  
·
·
·
·
·
·
·
400 MHz  
28 VOLTS  
POUT = 70 WATTS  
GP = 8.4 dB GAIN MINIMUM  
EFFICIENCY 60%  
GOLD METALLIZATION  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1511 is a 28 V Class C epitaxial silicon NPN planar  
transistor designed primarily for UHF communications.  
This device utilizes diffused emitter resistors to achieve  
VSWR of 10:1 under operating conditions, and is internally  
input matched to optimize power gain and efficiency over  
the 225 – 400 MHz band.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
30  
V
4.0  
V
8.0  
A
PDISS  
TJ  
Power Dissipation  
220  
+200  
W
Junction Temperature  
Storage Temperature  
°C  
°C  
TSTG  
-65 to +150  
1.25  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
°C/W  
MS1511.PDF 09-12-02  

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