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MS1504 PDF预览

MS1504

更新时间: 2024-11-02 03:48:23
品牌 Logo 应用领域
ADPOW 晶体射频和微波射频双极晶体管放大器
页数 文件大小 规格书
3页 97K
描述
RF AND MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

MS1504 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64Is Samacsys:N
最大集电极电流 (IC):8 A基于收集器的最大容量:95 pF
集电极-发射极最大电压:18 V配置:SINGLE
最小直流电流增益 (hFE):20最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-PRPM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1504 数据手册

 浏览型号MS1504的Datasheet PDF文件第2页浏览型号MS1504的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1504  
RF AND MICROWAVE TRANSISTORS  
VHF MOBILE APPLICATIONS  
Features  
·
·
·
·
160 MHz  
13.6 Volts  
Common Emitter  
POUT = 30 W Min.  
GP = 10.0 dB Gain  
·
DESCRIPTION:  
The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar  
transistor designed primarily for VHF communications. The MS1504  
utilizes an emitter ballasted die geometry to withstand severe load  
mismatch conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
Value  
36  
18  
36  
4.0  
Unit  
V
V
V
V
8.0  
A
PDISS  
TJ  
TSTG  
Power Dissipation  
Junction Temperature  
Storage Temperature  
70  
W
°C  
°C  
+200  
-65 to +150  
Thermal Data  
RTH(j-c)  
Junction-Case Thermal Resistance  
1.2  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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