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MS1501 PDF预览

MS1501

更新时间: 2024-11-18 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管电视射频微波
页数 文件大小 规格书
3页 97K
描述
RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

MS1501 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.8 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:25 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PRPM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1501 数据手册

 浏览型号MS1501的Datasheet PDF文件第2页浏览型号MS1501的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1501  
RF & MICROWAVE TRANSISTORS  
UHF TV/LINEAR APPLICATIONS  
Features  
·
·
·
·
·
·
860 MHz  
POUT = 2 WATTS  
GP = 8.5 dB MINIMUM  
GOLD METALLIZATION  
CLASS A LINEAR OPERATION  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1501 is a silicon NPN bipolar device specifically designed  
for high linearity applications in the UHF frequency range  
including TV Bands IV and V.  
Gold metallization and emitter ballasting assure high reliability  
under Class A linear amplifier operation.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector - Base Voltage  
45  
VCEO  
VEBO  
IC  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Device Currnet  
25  
4
V
V
800  
15.9  
+200  
mA  
W
PDISS  
TJ  
Power Dissipation  
Junction Temperature  
Storage Temperature  
°C  
°C  
Tstg  
-65 to +150  
Thermal Data  
RTH(J-C)  
Junction-case Thermal Resistance  
11.0  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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