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MS1480 PDF预览

MS1480

更新时间: 2024-11-02 03:48:23
品牌 Logo 应用领域
ADPOW 晶体射频双极晶体管微波放大器局域网
页数 文件大小 规格书
3页 97K
描述
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

MS1480 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-PXFM-F6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13Is Samacsys:N
其他特性:WITH DIFFUSED EMITTER RESISTORS最大集电极电流 (IC):10 A
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PXFM-F6
元件数量:1端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1480 数据手册

 浏览型号MS1480的Datasheet PDF文件第2页浏览型号MS1480的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1480  
RF & MICROWAVE TRANSISTORS  
UHF MOBILE APPLICATIONS  
Features  
·
·
·
·
·
470 MHz  
12.5 VOLTS  
P
OUT = 45 W  
GP = 5.0 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1480 is an epitaxial silicon NPN planar transistor  
designed primarily for 12.5 V Class C UHF communications.  
This device utilizes diffused emitter resistors to achieve  
infinite VSWR capability under specified operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VCES  
Parameter  
Value  
36  
Unit  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Power Dissipation  
16  
36  
4.0  
175  
10.0  
VEBO  
PDISS  
IC  
W
A
Device Current  
TJ  
Junction Temperature  
Storage Temperature  
200  
°C  
°C  
TSTG  
-65 to +150  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
1.0  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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