Datasheet > MS1452

MS1452

更新时间： 2024-11-02 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波
页数	文件大小	规格书
4页	141K
描述
RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

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数据手册

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MS1452 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1452

RF & MICROWAVE TRANSISTORS

800-900 MHz BASE STATION APPLICATIONS

Features

800-900 MHz

24 VOLTS

COMMON EMITTER

GOLD METALLIZATION

INTERNAL INPUT MATCHING

CLASS AB LINEAR OPERATION

OUT = 30 W MINIMUM

G_P= 7.5 dB

DESCRIPTION:

The MS1452 is a gold metallized epitaxial silicon NPN planar

transistor using diffused emitter ballast resistors for high

linearity Class AB operation in cellular base station application.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CBO

V_CES

Parameter

Value

4.0

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

V_EBO

P_DISS

I_C

Device Current

Junction Temperature

Storage Temperature

+200

°C

T_STG

-65 to +150

ºC

Thermal Data

R_TH(J-C)

Thermal Resistance Junction-case

3.0

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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