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MS1409 PDF预览

MS1409

更新时间: 2024-11-02 03:48:23
品牌 Logo 应用领域
ADPOW 晶体小信号双极晶体管射频小信号双极晶体管微波通信
页数 文件大小 规格书
3页 237K
描述
RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

MS1409 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82Is Samacsys:N
其他特性:HIGH RELIABILITY最大集电极电流 (IC):1 A
基于收集器的最大容量:10 pF集电极-发射极最大电压:40 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

MS1409 数据手册

 浏览型号MS1409的Datasheet PDF文件第2页浏览型号MS1409的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1409  
RF & MICROWAVE TRANSISTOR  
VHF COMMUNICATIONS  
Features  
175 MHz  
28 VOLTS  
POUT = 2.5 W  
GP = 10 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
1. Emitter  
2. Base  
3. Collector  
DESCRIPTION:  
The MS1409 is a NPN silicon transistor designed for high  
power gain VHF and UHF communication applications.  
Gold metalization and diffused emitter ballast resistors  
provide superior long term reliability.  
TO-39  
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
65  
Unit  
Collector-base Voltage  
V
V
V
40  
VCEO  
Collector-emitter Voltage  
Emitter-base Voltage  
Total Power Dissipation  
Collector Peak Current  
Junction Temperature  
Storage Temperature  
VEBO  
4.0  
7.0  
1.0  
200  
PDISS  
W
A
IC  
TJ  
º
C
C
TSTG  
-65 to 200  
º
Thermal Data  
RTH(J-CASE)  
Thermal Resistance Junction-case  
25  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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