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MS1408 PDF预览

MS1408

更新时间: 2024-11-02 03:48:23
品牌 Logo 应用领域
ADPOW 晶体射频和微波射频双极晶体管放大器局域网
页数 文件大小 规格书
3页 103K
描述
RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

MS1408 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65Is Samacsys:N
其他特性:WITH EMITTER BALLAST RESISTOR最大集电极电流 (IC):3 A
基于收集器的最大容量:35 pF集电极-发射极最大电压:35 V
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRFM-F4
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MS1408 数据手册

 浏览型号MS1408的Datasheet PDF文件第2页浏览型号MS1408的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1408  
RF AND MICROWAVE TRANSISTORS  
108-152MHz APPLICATIONS  
Features  
·
·
·
·
·
·
·
FM CLASS C TRANSISTOR  
FREQUENCY 136MHz  
VOLTAGE 28V  
POWER OUT 20W  
POWER GAIN 8.2dB  
EFFICIENCY 55%  
COMMON EMITTER  
DESCRIPTION:  
The MS1408 is a 28 volt epitaxial silicon NPN planar transistor  
designed for 108-152MHz AM class C and FM communications.  
This device utilizes diffused emitter resisters to achieve VSWR at  
rated operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
65  
35  
65  
4
3
30  
Unit  
V
V
V
V
A
PDISS  
TJ  
Power Dissipation  
Junction Temperature  
Storage Temperature  
W
°C  
°C  
+ 200  
- 65 to + 150  
TSTG  
Thermal Data  
RTH(j-c)  
Junction-Case Thermal Resistance  
5.83  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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