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MS1253 PDF预览

MS1253

更新时间: 2024-11-12 03:48:23
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波
页数 文件大小 规格书
4页 115K
描述
RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

MS1253 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65其他特性:WITH EMITTER BALLASTING RESISTORS
最大集电极电流 (IC):12 A基于收集器的最大容量:300 pF
集电极-发射极最大电压:18 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRFM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1253 数据手册

 浏览型号MS1253的Datasheet PDF文件第2页浏览型号MS1253的Datasheet PDF文件第3页浏览型号MS1253的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1253  
RF & MICROWAVE TRANSISTORS  
HF/VHF APPLICATIONS  
Features  
·
·
·
·
·
50 MHz  
12.5 VOLTS  
POUT = 70 WATTS  
Gp = 10 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1253 is a 12.5 V Class C epitaxial silicon NPN  
transistor designed primarily for land mobile transmitter  
applications. This device utilizes emitter ballasting, is  
extremely stable and capable of withstanding high VSWR  
under operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
PDISS  
IC  
Parameter  
Value  
45  
18  
3.5  
183  
12.0  
Unit  
V
V
V
W
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Power Dissipation  
Device Current  
TJ  
Junction Temperature  
Storage Temperature  
200  
°C  
°C  
TSTG  
-65 to +150  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
1.05  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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