Datasheet > MS10N120HGE0

MS10N120HGE0

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
7页	3269K
描述
TO-263

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中文翻译

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数据手册

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MS10N120HGE0 数据手册

MS10N120HGC0/T1/E0

Planar Process N-Channel MOS

Features



V_DS=1200V,I_D=10A

R_DS(on)<2Ω @ V_GS=10V

High density cell design for ultra low Rdson

Low gate charge



Improved dv/dt capability

RoHS product

Applications



High Voltage Switched-mode and

resonant-mode power supplies

High Voltage Pulse Power Applications

High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators



High Voltage DC-DC converters

High Voltage DC-AC inverters

Absolute Ratings (Tc=25℃)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

1200

±30

Drain Current-continuous

Drain Current-pulse(note1)

I_D

I_DM

Single Pulsed Avalanche Energy

(note2)

E_AS

430

Maximum Power Dissipation

(TO-247)

Maximum Power Dissipation

(TO-263)

277

Maximum Power Dissipation

(TO-220F)

67.9

Operating and Storage

Temperature Range

Maximum lead temperature for

soldering purposes

T_J,T_STG

-55~+175

300

℃

Electrical Characteristics(T_CASE=25℃ unless otherwise specified)

H1.01

Maspower

12 3 4 5 6 7

中文翻译

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