MS1076

更新时间： 2024-09-23 03:48:23

品牌	Logo	应用领域
ADPOW		晶体射频双极晶体管微波局域网
页数	文件大小	规格书
3页	91K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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中文翻译

获取价格

技术参数
数据手册

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MS1076 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.56	Is Samacsys：	N
其他特性：	WITH EMITTER BALLASTING RESISTORS	最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	35 V	配置：	SINGLE
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	O-PRFM-F4
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	FLAT	端子位置：	RADIAL
晶体管元件材料：	SILICON	Base Number Matches：	1

MS1076 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1076

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

30 MHz

28 VOLTS

GOLD METALLIZATION

P_OUT= 220 W PEP

G_P= 12 dB GAIN MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Device Current

4.0

P_DISS

T_J

Power Dissipation

320

+200

°C

Junction Temperature

Storage Temperature

T_STG

- 65 to +150

Thermal Data

R_TH(J-C)

Junction - Case Thermal Resistance

0.7

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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与MS1076相关器件

型号	品牌	获取价格	描述	数据表
MS1076A	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076B	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076C	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076D	MICROSEMI	获取价格	暂无描述
MS1076E	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076F	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076G	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076H	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1076I	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH
MS1077	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS