Datasheet > MRFE6VP61K25H

MRFE6VP61K25H

更新时间： 2024-11-06 02:51:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
23页	972K
描述
RF Power LDMOS Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRFE6VP61K25H 数据手册

Document Number: MRFE6VP61K25H

Rev. 4.1, 3/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MRFE6VP61K25HR6

MRFE6VP61K25HR5

MRFE6VP61K25HSR5

MRFE6VP61K25GSR5

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.



Typical Performance: V_DD= 50 Volts, I_DQ= 100 mA

1.8--600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

(W)

(dB)



(%)

out

Signal Type

(MHz)

Pulse

1250 Peak

230

24.0

74.0

(100 sec, 20% Duty Cycle)

1250 CW

230

22.9

74.6

Application Circuits ⁽¹⁾— Typical Performance

Frequency

(MHz)

out

(W)

(dB)



Signal Type

(%)

NI--1230H--4S

MRFE6VP61K25HR6/R5

1300

1250

1100

1250

225

81.36

87.5--108

144--148

170--230

352

DVB--T

NI--1230S--4S

Pulse

1250

21.5

MRFE6VP61K25HSR5

(200 sec,

20% Duty Cycle)

352

500

1150

1000

20.5

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

NI--1230GS--4L

MRFE6VP61K25GSR5

Frequency

(MHz)

(W)

Test

Voltage

out

Signal Type

VSWR

Result

230

Pulse

> 65:1 at all

1500 Peak

(3 dB

No Device

Degradation

(100 sec, 20% Phase Angles

Duty Cycle)

Overdrive)

Gate A

Gate B

Drain A

Drain B

Features



Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation



Characterized with Series Equivalent Large--Signal Impedance Parameters

Figure 1. Pin Connections

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...23

中文翻译

下载PDF

与MRFE6VP61K25H相关器件

型号	品牌	获取价格	描述	数据表
MRFE6VP61K25HR5	FREESCALE	获取价格	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP61K25HR5	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HR6	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HR6	FREESCALE	获取价格	RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
MRFE6VP61K25HR6_11	FREESCALE	获取价格	RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
MRFE6VP61K25HR6_12	FREESCALE	获取价格	RF Power LDMOS Transistors
MRFE6VP61K25HS	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HSR5	FREESCALE	获取价格	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP61K25HSR5	NXP	获取价格	RF Power LDMOS Transistors
MRFE6VP61K25HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

与MRFE6VP61K25H相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MRFE6VP61K25H

MRFE6VP61K25H 数据手册

与MRFE6VP61K25H相关器件

与MRFE6VP61K25H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRFE6VP61K25H

MRFE6VP61K25H 数据手册

与MRFE6VP61K25H相关器件

与MRFE6VP61K25H相关文章

您还可以找

您在本页遇到什么问题？