Datasheet > MRFE6VP5600H

MRFE6VP5600H

更新时间： 2024-11-06 02:52:35

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恩智浦 - NXP		/
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描述
RF Power Field Effect Transistors

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数据手册

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MRFE6VP5600H 数据手册

Document Number: MRFE6VP5600H

Rev. 1, 1/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

High Ruggedness N--Channel

MRFE6VP5600HR6

MRFE6VP5600HSR6

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

1.8--600 MHz, 600 W CW, 50 V

LATERAL N--CHANNEL

BROADBAND

•

Typical Performance: V_DD= 50 Volts, I_DQ= 100 mA

(W)

(dB)

(%)

IRL

(dB)

out

RF POWER MOSFETs

Signal Type

(MHz)

Pulsed (100 μsec,

600 Peak

230

25.0

74.6

-- 1 8

20% Duty Cycle)

600 Avg.

230

24.6

75.2

-- 1 7

•

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness

600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec

•

CASE 375D--05, STYLE 1

NI--1230

Features

•

Unmatched Input and Output Allowing Wide Frequency Range Utilization

MRFE6VP5600HR6

Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Integrated ESD Protection with Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP5600HSR6

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

PARTS ARE PUSH--PULL

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +130

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

RF /V

out DS

in GS

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

RF /V

out DS

RF /V

in GS

°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1667

8.33

W/°C

(Top View)

(1,2)

Figure 1. Pin Connections

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz

Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz

0.022

0.12

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRFE6VP5600HR6 MRFE6VP5600HSR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

中文翻译

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与MRFE6VP5600H相关器件

型号	品牌	获取价格	描述	数据表
MRFE6VP5600HR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP5600HR6	NXP	获取价格	RF Power Field Effect Transistors
MRFE6VP5600HR6_11	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP5600HS	NXP	获取价格	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
MRFE6VP5600HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRFE6VP5600HSR6	NXP	获取价格	RF Power Field Effect Transistors
MRFE6VP61K25GN	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25GS	NXP	获取价格	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25GSR5	FREESCALE	获取价格	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP61K25GSR5	NXP	获取价格	RF Power LDMOS Transistors

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