是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.18 | Is Samacsys: | N |
外壳连接: | SOURCE | 配置: | COMMON SOURCE, 2 ELEMENTS |
最小漏源击穿电压: | 65 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | S BAND | JESD-30 代码: | R-CDFM-F4 |
元件数量: | 2 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 125 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF8P20140WHSR3 | FREESCALE |
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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | |
MRF8P20140WHSR3 | NXP |
获取价格 |
N-Channel Enhancement-Mode Lateral MOSFET | |
MRF8P20160H | NXP |
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RF Power Field Effect Transistors | |
MRF8P20160HR3 | NXP |
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RF Power Field Effect Transistors | |
MRF8P20160HSR3 | NXP |
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RF Power Field Effect Transistors | |
MRF8P20165WH | NXP |
获取价格 |
RF Power Field Effect Transistors | |
MRF8P20165WHR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs | |
MRF8P20165WHR3 | NXP |
获取价格 |
RF Power Field Effect Transistors | |
MRF8P20165WHSR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs | |
MRF8P20165WHSR3 | NXP |
获取价格 |
RF Power Field Effect Transistors |