Datasheet > MRF8P20140WGHSR3

MRF8P20140WGHSR3

更新时间： 2024-01-15 09:11:50

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	528K
描述
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V

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MRF8P20140WGHSR3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.76
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	125 °C
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	140 W	子类别：	FET General Purpose Power
表面贴装：	YES	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

MRF8P20140WGHSR3 数据手册

Document Number: MRF8P20140WH

Rev. 1, 11/2013

Freescale Semiconductor

Technical Data

MRF8P20140WHR3

MRF8P20140WHSR3

MRF8P20140WGHSR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to

2025 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

1880--2025 MHz, 24 W AVG., 28 V

SINGLE W--CDMA



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQA= 500 mA, V_GSB= 1.2 Vdc, P_out= 24 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

(dB)



(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

1880 MHz

1920 MHz

2025 MHz

16.0

15.9

42.8

43.7

42.0

8.0

8.1

--31.0

--32.6

--31.2

NI--780H--4L

MRF8P20140WHR3



Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW ⁽¹⁾

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 3 dB Compression Point ≃ 170 Watts ⁽¹⁾

)

Features



Designed for Wide Instantaneous Bandwidth Applications. VBW_res

240 MHz.

≃



Designed for Wideband Applications that Require 160 MHz Signal Bandwidth

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Large--Signal Load--Pull Parameters and Common Source

S--Parameters

NI--780S--4L

MRF8P20140WHSR3



Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,

13--inch Reel.

NI--780GS--4L

MRF8P20140WGHSR3



NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm

Tape Width, 13--inch Reel.

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

1. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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与MRF8P20140WGHSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF8P20140WH	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P20140WHR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20140WHR3	NXP	获取价格	2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780-4, CASE 465M-01
MRF8P20140WHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20140WHSR3	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P20160H	NXP	获取价格	RF Power Field Effect Transistors
MRF8P20160HR3	NXP	获取价格	RF Power Field Effect Transistors
MRF8P20160HSR3	NXP	获取价格	RF Power Field Effect Transistors
MRF8P20165WH	NXP	获取价格	RF Power Field Effect Transistors
MRF8P20165WHR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

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