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MRF8372 PDF预览

MRF8372

更新时间: 2024-11-10 22:51:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管射频小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 105K
描述
RF LOW POWER TRANSISTOR NPN SILICON

MRF8372 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
风险等级:5.31Is Samacsys:N
最大集电极电流 (IC):0.2 A基于收集器的最大容量:2.5 pF
集电极-发射极最大电压:16 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:1.67 W最大功率耗散 (Abs):1.5 W
最小功率增益 (Gp):8 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MRF8372 数据手册

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Order this document  
by MRF8372/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed primarily for wideband large signal predriver stages in 800 MHz  
and UHF frequency ranges.  
Specified @ 12.5 V, 870 MHz Characteristics  
Output Power = 750 mW  
750 mW, 870 MHz  
Minimum Gain = 8.0 dB  
Efficiency 60% (Typ)  
RF LOW POWER  
TRANSISTOR  
NPN SILICON  
State–of–the–Art Technology  
Fine Line Geometry  
Gold Top Metal and Wires  
Silicon Nitride Passivated  
Ion Implanted Arsenic Emitters  
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
Order MRF8372 in tape and reel packaging by adding suffix:  
R1 suffix = 500 units per reel  
R2 suffix = 2,500 units per reel  
CASE 751–05, STYLE 1  
SORF (SO–8)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
16  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
36  
Vdc  
4.0  
Vdc  
Collector Current — Continuous  
I
C
200  
mAdc  
Total Device Dissipation @ T = 75°C (1)  
Derate above 75°C  
P
D
1.67  
Watts  
C
22.2  
55 to +150  
150  
mW/°C  
°C  
Storage Temperature Range  
Maximum Junction Temperature  
T , T  
J stg  
T
°C  
Jmax  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
45  
°C/W  
θJC  
DEVICE MARKING  
MRF8372 = 8372  
NOTE:  
1. Case temperature measured on collector lead immediately adjacent to body of package.  
(Replaces MRF837/D)  
Motorola, Inc. 1997  

MRF8372 替代型号

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