Datasheet > MRF5P21240

MRF5P21240

更新时间： 2022-11-26 18:14:29

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	776K
描述
RF POWER FIELD EFFECT TRANSISTOR

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MRF5P21240 数据手册

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Freescale Semiconductor, Inc.

Order this document

by MRF5P21240/D

SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFET

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Designed for W–CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

2170 MHz, 52 W AVG.,

2 x W–CDMA, 28 V

LATERAL N–CHANNEL

RF POWER MOSFET

• Typical 2–carrier W–CDMA Performance for V_DD= 28 Volts,

I_DQ= 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz,

Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over

3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products

Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,

Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power — 52 Watts Avg.

Power Gain — 13 dB

Efficiency — 24%

IM3 — –36 dBc

ACPR — –39 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 375D–04, STYLE 1

NI–1230

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz,

180 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

500

2.86

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

–65 to +150

200

°C

stg

180

Watts

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

Case Temperature 55°C, 180 W CW

Case Temperature 45°C, 52 W CW

°C/W

0.35

0.40

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

MRF5P21240R6

 Motorola, Inc. 2003

For More Information On This Product,

Go to: www.freescale.com

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