Datasheet > MRF5P20180HR6_06

MRF5P20180HR6_06

更新时间： 2022-12-21 02:52:57

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	386K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF5P20180HR6_06 数据手册

Document Number: MRF5P20180HR6

Rev. 1, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

MRF5P20180HR6

• Typical 2-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ= 1600 mA,

_out= 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84

1930-1990 MHz, 38 W AVG., 28 V

2 x W-CDMA

MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

LATERAL N-CHANNEL

RF POWER MOSFET

Drain Efficiency — 26%

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 375D-05, STYLE 1

NI-1230

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

530

3.0

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

CW Operation @ T = 25°C

Derate above 25°C

185

1.2

W/°C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 77°C, 120 W CW

Case Temperature 72°C, 38 W CW

°C/W

0.33

0.35

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5P20180HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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