Datasheet > MRF5943R2G

MRF5943R2G

更新时间： 2024-01-14 09:52:56

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	124K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MRF5943R2G 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.02
最大集电极电流 (IC)：	0.4 A	配置：	Single
最小直流电流增益 (hFE)：	25	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MRF5943R2G 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MRF5943, R1, R2

MRF5943G, R1, R2

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

* G Denotes RoHS Compliant, Pb Free Terminal Finish

Features

Low Cost SO-8 Plastic Surface Mount Package.

S-Parameter Characterization

Tape and Reel Packaging Options Available

Maximum Available Gain = 17dB @ 300MHz

SO-8

R1 suffix–Tape and Reel, 500 units

R2 suffix–Tape and Reel, 2500 units

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and

oscillators.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

3.5

400

Thermal Data

Total Device Dissipation @ TC = 25ºC

Derate above 25ºC

1.0

Watts

mW/ ºC

Storage Temperature

stg

150

125

ºC

Thermal Resistance, Junction to Ambient

qJA

ºC/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

12 3 4 5

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