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MRF555 PDF预览

MRF555

更新时间: 2024-09-25 10:47:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关射频微波
页数 文件大小 规格书
6页 147K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF555 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:TransferredReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.37
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:5.5 pF集电极-发射极最大电压:16 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PRDB-F4
JESD-609代码:e0元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

MRF555 数据手册

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MRF581  
MRF581G  
MRF581A  
MRF581AG  
*G Denotes RoHS Compliant, Pb free Terminal Finish  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
Low Noise - 2.5 dB @ 500 MHZ  
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz  
Ftau - 5.0 GHz @ 10v, 75mA  
Cost Effective MacroX Package  
Macro X  
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
MRF581  
MRF581A  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
18  
15  
30  
2.5  
200  
Thermal Data  
P
Total Device Dissipation @ TC = 50ºC  
Derate above 50ºC  
2.5  
25  
Watts  
mW/ ºC  
D
P
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.25  
10  
Watts  
mW/ ºC  
D
Storage Junction Temperature Range  
Tstg  
-65 to +150  
150  
ºC  
ºC  
Maximum Junction Temperature  
TJmax  
Revision A- December 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  

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