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MRF553T PDF预览

MRF553T

更新时间: 2024-01-18 17:18:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管射频小信号双极晶体管微波
页数 文件大小 规格书
6页 147K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553T 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A基于收集器的最大容量:20 pF
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRDB-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF553T 数据手册

 浏览型号MRF553T的Datasheet PDF文件第2页浏览型号MRF553T的Datasheet PDF文件第3页浏览型号MRF553T的Datasheet PDF文件第4页浏览型号MRF553T的Datasheet PDF文件第5页浏览型号MRF553T的Datasheet PDF文件第6页 
MRF581  
MRF581G  
MRF581A  
MRF581AG  
*G Denotes RoHS Compliant, Pb free Terminal Finish  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
Low Noise - 2.5 dB @ 500 MHZ  
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz  
Ftau - 5.0 GHz @ 10v, 75mA  
Cost Effective MacroX Package  
Macro X  
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
MRF581  
MRF581A  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
18  
15  
30  
2.5  
200  
Thermal Data  
P
Total Device Dissipation @ TC = 50ºC  
Derate above 50ºC  
2.5  
25  
Watts  
mW/ ºC  
D
P
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.25  
10  
Watts  
mW/ ºC  
D
Storage Junction Temperature Range  
Tstg  
-65 to +150  
150  
ºC  
ºC  
Maximum Junction Temperature  
TJmax  
Revision A- December 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  

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