Datasheet > MRF553G

MRF553G

更新时间： 2024-02-15 06:44:55

品牌	Logo	应用领域
ADPOW		放大器晶体管
页数	文件大小	规格书
5页	139K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, POWER, PLASTIC, M234, MACRO PACKAGE-4

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技术参数
数据手册

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MRF553G 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.55
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	30	极性/信道类型：	NPN
最大功率耗散 (Abs)：	3 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

MRF553G 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MRF553

MRF553G

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

* G Denotes RoHS Compliant, Pb Free Terminal Finish

Features

Specified @ 12.5 V, 175 MHz Characteristics

Output Power = 1.5 W

Minimum Gain = 11.5 dB

Efficiency 60% (Typ)

Cost Effective PowerMacro Package

Power Macro

Electroless Tin Plated Leads for Improved Solderability

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

4.0

500

Thermal Data

Total Device Dissipation @ TC = 75ºC

Derate above 75ºC

3.0

Watts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

12 3 4 5

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