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MRF553

更新时间: 2024-02-03 20:03:14
品牌 Logo 应用领域
ASI 晶体晶体管
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF TRANSISTOR

MRF553 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A基于收集器的最大容量:20 pF
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRDB-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF553 数据手册

  
MRF553  
NPN SILICON RF TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE  
The ASI MRF553 is designed for  
Low power amplifier applications.  
MILLIMETERS  
INCHES  
MIN  
DIM  
A
B
C
D
E
MIN  
4.45  
1.91  
0.84  
2.46  
8.84  
0.20  
7.24  
MAX  
5.21  
2.54  
0.99  
2.64  
9.73  
0.31  
8.13  
MAX  
.205  
.100  
.039  
.104  
.383  
0.12  
.320  
.175  
.075  
.033  
.097  
.348  
.008  
.285  
FEATURES:  
12.5 V, 175 MHz.  
POUT = 1.5 W  
GP = 11.5 min.  
• η = 60 % (Typ)  
F
G
H
J
1.65  
3.25  
0.65  
0.128  
K
0.64  
1.02  
.025  
0.40  
MAXIMUM RATINGS  
500 mA  
36 V  
IC  
VCB  
PDISS  
TJ  
1 = COLLECTOR  
2 = EMITTER  
3 = BASE  
4 = EMITTER  
3.0 W @ TC = 75 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
41.7 °C/W  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 5.0 mA  
IC = 5.0 mA  
IE = 1.0 mA  
16  
36  
36  
4.0  
V
BVCBO  
BVCES  
BVEBO  
ICES  
V
V
V
V
CE = 15 V  
CE = 5.0 V  
5.0  
mA  
---  
V
IC = 250 mA  
POUT = 1.5 W  
30  
200  
hFE  
VCB = 10 V  
f = 1.0 MHz  
f = 175 MHz  
12  
20  
CCB  
pF  
V
CE = 12 V  
11.5  
50  
13  
60  
GPE  
η
dB  
%
10:1  
---  
ψ
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

MRF553 替代型号

型号 品牌 替代类型 描述 数据表
MRF553 MICROSEMI

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