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MRF553 PDF预览

MRF553

更新时间: 2024-02-16 10:08:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管射频小信号双极晶体管微波
页数 文件大小 规格书
5页 232K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A基于收集器的最大容量:20 pF
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRDB-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF553 数据手册

 浏览型号MRF553的Datasheet PDF文件第2页浏览型号MRF553的Datasheet PDF文件第3页浏览型号MRF553的Datasheet PDF文件第4页浏览型号MRF553的Datasheet PDF文件第5页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, P
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MRF553  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
·
·
·
·
·
·
Specified @ 12.5 V, 175 MHz Characteristics  
Output Power = 1.5 W  
Minimum Gain = 11.5 dB  
Efficiency 60% (Typ)  
Cost Effective PowerMacro Package  
Power Macro  
Electroless Tin Plated Leads for Improved Solderability  
DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
16  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
36  
4.0  
500  
Thermal Data  
P
D
Total Device Dissipation @ TC = 75ºC  
Derate above 75ºC  
3.0  
40  
Watts  
mW/ ºC  
MSC1316.PDF 10-25-99  

MRF553 替代型号

型号 品牌 替代类型 描述 数据表
MRF553 ASI

功能相似

NPN SILICON RF TRANSISTOR
2SC1970 MITSUBISHI

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NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

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