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MRF5035 PDF预览

MRF5035

更新时间: 2024-11-07 10:47:27
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页数 文件大小 规格书
8页 146K
描述
N-CHANNEL BROADBAND RF POWER FET

MRF5035 数据手册

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Order this document  
by MRF5035/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode  
Designed for broadband commercial and industrial applications at frequen-  
cies to 520 MHz. The high gain and broadband performance of this device  
makes it ideal for large–signal, common source amplifier applications in 12.5  
volt mobile, and base station FM equipment.  
Guaranteed Performance at 512 MHz, 12.5 Volt  
Output Power — 35 Watts  
35 W, 12.5 VOLTS, 512 MHz  
N–CHANNEL BROADBAND  
RF POWER FET  
Power Gain — 6.5 dB Min  
Efficiency — 50% Min  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
S–Parameter Characterization at High Bias Levels  
Excellent Thermal Stability  
All Gold Metal for Ultra Reliability  
Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz,  
2 dB Overdrive  
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
CASE 316–01, STYLE 3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
36  
Unit  
Drain–Source Voltage  
V
DSS  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Gate Voltage (RGS = 1 M)  
Gate–Source Voltage  
V
DGR  
36  
V
GS  
± 20  
15  
Drain Current — Continuous  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
97  
0.56  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
– 65 to +150  
200  
°C  
°C  
stg  
T
J
Characteristic  
Thermal Resistance, Junction to Case  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
Symbol  
Max  
Unit  
R
1.8  
°C/W  
θJC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain–Source Breakdown Voltage (V  
GS  
= 0, I = 20 mAdc)  
V
36  
5
Vdc  
mAdc  
D
(BR)DSS  
Zero Gate Voltage Drain Current (V  
DS  
= 15 Vdc, V  
= 0)  
= 0)  
I
GS  
DSS  
Gate–Source Leakage Current (V  
GS  
= 20 Vdc, V  
DS  
I
5
µAdc  
GSS  
(continued)  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 1994  

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