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by MRF5035/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
•
Guaranteed Performance at 512 MHz, 12.5 Volt
Output Power — 35 Watts
35 W, 12.5 VOLTS, 512 MHz
N–CHANNEL BROADBAND
RF POWER FET
Power Gain — 6.5 dB Min
Efficiency — 50% Min
•
•
•
•
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz,
2 dB Overdrive
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 316–01, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
36
Unit
Drain–Source Voltage
V
DSS
Vdc
Vdc
Vdc
Adc
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
V
DGR
36
V
GS
± 20
15
Drain Current — Continuous
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
97
0.56
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
– 65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
1.8
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V
GS
= 0, I = 20 mAdc)
V
36
—
—
—
—
—
—
5
Vdc
mAdc
D
(BR)DSS
Zero Gate Voltage Drain Current (V
DS
= 15 Vdc, V
= 0)
= 0)
I
GS
DSS
Gate–Source Leakage Current (V
GS
= 20 Vdc, V
DS
I
5
µAdc
GSS
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF5035
1