Datasheet > MRF5015

MRF5015

更新时间： 2024-02-13 04:34:46

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频放大器局域网
页数	文件大小	规格书
8页	158K
描述
N-CHANNEL BROADBAND RF POWER FET

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MRF5015 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
配置：	Single	最大漏极电流 (Abs) (ID)：	6 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

MRF5015 数据手册

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by MRF5015/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequen-

cies to 520 MHz. The high gain and broadband performance of this device

makes it ideal for large–signal, common source amplifier applications in 12.5

volt mobile, and base station FM equipment.

•

Guaranteed Performance at 512 MHz, 12.5 Volts

Output Power — 15 Watts

15 W, 512 MHz, 12.5 VOLTS

N–CHANNEL BROADBAND

RF POWER FET

Power Gain — 10 dB Min

Efficiency — 50% Min

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

All Gold Metal for Ultra Reliability

Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

CASE 319–07, STYLE 3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

DSS

Vdc

Adc

Drain–Gate Voltage (RGS = 1 MΩ)

Gate–Source Voltage

DGR

± 20

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.29

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

– 65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Symbol

Max

Unit

3.5

°C/W

θJC

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (V

= 0, I = 5 mAdc)

(BR)DSS

—

Vdc

mAdc

Zero Gate Voltage Drain Current (V

= 15 Vdc, V

= 0)

= 20 Vdc, V

= 0)

DSS

GSS

Gate–Source Leakage Current (V

µAdc

(continued)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994

MRF5015

12 3 4 5 6 7 8

中文翻译

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与MRF5015相关器件

型号	品牌	获取价格	描述	数据表
MRF502	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| TO-72
MRF5035	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF5035	FREESCALE	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF511	MOTOROLA	获取价格	VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-117
MRF515	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
MRF5160HX	MOTOROLA	获取价格	UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-39
MRF5160HXV	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic
MRF517	ASI	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
MRF517	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5174	ASI	获取价格	NPN RF POWER TRANSISTOR

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