MRF5007R1

更新时间： 2024-11-01 22:06:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频
页数	文件大小	规格书
10页	165K
描述
N-CHANNEL BROADBAND RF POWER FET

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数据手册

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MRF5007R1 数据手册

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by MRF5007/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode

The MRF5007 is designed for broadband commercial and industrial

applications at frequencies to 520 MHz. The high gain and broadband

performance of this device makes it ideal for large–signal, common source

amplifier applications in 7.5 Volt portable FM equipment.

7.0 W, 7.5 Vdc

512 MHz

N–CHANNEL

BROADBAND

RF POWER FET

•

Guaranteed Performance at 512 MHz, 7.5 Volts

Output Power = 7.0 Watts

Power Gain = 10 dB Min

Efficiency = 50% Min

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

All Gold Metal for Ultra Reliability

Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive

True Surface Mount Package

Available in Tape and Reel by Adding R1 Suffix to Part Number.

R1 Suffix = 500 Units per 16 mm, 7 inch Reel.

CASE 430B–02, Style 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

Drain–Gate Voltage (R

Gate–Source Voltage

DSS

= 1.0 Meg Ohm)

DGR

±20

4.5

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.14

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

3.8

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 2

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1995

MRF5007 MRF5007R1

12 3 4 5 6 7...10

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