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MRF5007R1 PDF预览

MRF5007R1

更新时间: 2024-11-06 22:06:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 射频
页数 文件大小 规格书
10页 165K
描述
N-CHANNEL BROADBAND RF POWER FET

MRF5007R1 数据手册

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Order this document  
by MRF5007/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode  
The MRF5007 is designed for broadband commercial and industrial  
applications at frequencies to 520 MHz. The high gain and broadband  
performance of this device makes it ideal for large–signal, common source  
amplifier applications in 7.5 Volt portable FM equipment.  
7.0 W, 7.5 Vdc  
512 MHz  
N–CHANNEL  
BROADBAND  
RF POWER FET  
Guaranteed Performance at 512 MHz, 7.5 Volts  
Output Power = 7.0 Watts  
Power Gain = 10 dB Min  
Efficiency = 50% Min  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
S–Parameter Characterization at High Bias Levels  
Excellent Thermal Stability  
All Gold Metal for Ultra Reliability  
Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive  
True Surface Mount Package  
Available in Tape and Reel by Adding R1 Suffix to Part Number.  
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.  
CASE 430B–02, Style 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Source Voltage  
Drain–Gate Voltage (R  
Gate–Source Voltage  
V
DSS  
= 1.0 Meg Ohm)  
V
DGR  
25  
GS  
V
GS  
±20  
4.5  
Drain Current — Continuous  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
25  
0.14  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
3.8  
°C/W  
θJC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 1995  

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