Datasheet > MRF5003

MRF5003

更新时间： 2024-01-26 03:49:02

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频光电二极管放大器
页数	文件大小	规格书
10页	209K
描述
N-CHANNEL BROADBAND RF POWER FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MRF5003 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	1.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	12.5 W
子类别：	FET General Purpose Power	Base Number Matches：	1

MRF5003 数据手册

Order this document

by MRF5003/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode

The MRF5003 is designed for broadband commercial and industrial

applications at frequencies to 520 MHz. The high gain and broadband

performance of this device makes it ideal for large–signal, common source

amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base

station FM equipment.

3.0 W, 7.5 V, 512 MHz

•

Guaranteed Performance at 512 MHz, 7.5 Volts

Output Power = 3.0 Watts

Power Gain = 9.5 dB

N–CHANNEL

BROADBAND

RF POWER FET

Efficiency = 45%

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

All Gold Metal for Ultra Reliability

Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive

Suitable for 12.5 Volt Applications

True Surface Mount Package

Available in Tape and Reel by Adding R1 Suffix to Part Number.

R1 Suffix = 500 Units per 16 mm, 7 inch Reel.

•

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

CASE 430–01, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

Drain–Gate Voltage (R

Gate–Source Voltage

DSS

= 1.0 Meg Ohm)

DGR

±20

1.7

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

12.5

0.07

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

–65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994

MRF5003

12 3 4 5 6 7...10

中文翻译

下载PDF

与MRF5003相关器件

型号	品牌	获取价格	描述	数据表
MRF5003R1	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5007	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF5007R1	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF500AMMO	BEL	获取价格	Electric Fuse, Fast Blow, 0.5A, 35A (IR), MICRO,
MRF501	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| TO-72
MRF5015	FREESCALE	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF5015	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FET
MRF5015	NJSEMI	获取价格	FET Transistor
MRF502	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| TO-72
MRF5035	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER FET