5秒后页面跳转
MRF5003 PDF预览

MRF5003

更新时间: 2024-11-02 04:14:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管光电二极管放大器
页数 文件大小 规格书
10页 209K
描述
N-CHANNEL BROADBAND RF POWER FET

MRF5003 技术参数

生命周期:Obsolete包装说明:MICROWAVE, R-CXMW-N3
Reach Compliance Code:unknown风险等级:5.25
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:36 V最大漏极电流 (Abs) (ID):1.7 A
最大漏极电流 (ID):1.7 A最大漏源导通电阻:0.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5.4 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CXMW-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:MICROWAVE极性/信道类型:N-CHANNEL
功耗环境最大值:12.5 W最大功率耗散 (Abs):12.5 W
最小功率增益 (Gp):9.5 dB认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF5003 数据手册

 浏览型号MRF5003的Datasheet PDF文件第2页浏览型号MRF5003的Datasheet PDF文件第3页浏览型号MRF5003的Datasheet PDF文件第4页浏览型号MRF5003的Datasheet PDF文件第5页浏览型号MRF5003的Datasheet PDF文件第6页浏览型号MRF5003的Datasheet PDF文件第7页 
Order this document  
by MRF5003/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode  
The MRF5003 is designed for broadband commercial and industrial  
applications at frequencies to 520 MHz. The high gain and broadband  
performance of this device makes it ideal for large–signal, common source  
amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base  
station FM equipment.  
3.0 W, 7.5 V, 512 MHz  
Guaranteed Performance at 512 MHz, 7.5 Volts  
Output Power = 3.0 Watts  
Power Gain = 9.5 dB  
N–CHANNEL  
BROADBAND  
RF POWER FET  
Efficiency = 45%  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
S–Parameter Characterization at High Bias Levels  
Excellent Thermal Stability  
All Gold Metal for Ultra Reliability  
Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive  
Suitable for 12.5 Volt Applications  
True Surface Mount Package  
Available in Tape and Reel by Adding R1 Suffix to Part Number.  
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.  
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
CASE 430–01, STYLE 2  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
36  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Source Voltage  
Drain–Gate Voltage (R  
Gate–Source Voltage  
V
DSS  
= 1.0 Meg Ohm)  
V
DGR  
36  
GS  
V
GS  
±20  
1.7  
Drain Current — Continuous  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
12.5  
0.07  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
14  
°C/W  
θJC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 1994  

与MRF5003相关器件

型号 品牌 获取价格 描述 数据表
MRF5003R1 MOTOROLA

获取价格

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5007 MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FET
MRF5007R1 MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FET
MRF500AMMO BEL

获取价格

Electric Fuse, Fast Blow, 0.5A, 35A (IR), MICRO,
MRF501 ETC

获取价格

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
MRF5015 FREESCALE

获取价格

N-CHANNEL BROADBAND RF POWER FET
MRF5015 MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FET
MRF5015 NJSEMI

获取价格

FET Transistor
MRF502 ETC

获取价格

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
MRF5035 MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FET