生命周期: | Obsolete | 包装说明: | MICROWAVE, R-CXMW-N3 |
Reach Compliance Code: | unknown | 风险等级: | 5.25 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 36 V | 最大漏极电流 (Abs) (ID): | 1.7 A |
最大漏极电流 (ID): | 1.7 A | 最大漏源导通电阻: | 0.75 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5.4 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-CXMW-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | MICROWAVE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 12.5 W | 最大功率耗散 (Abs): | 12.5 W |
最小功率增益 (Gp): | 9.5 dB | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UNSPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF5003R1 | MOTOROLA |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | |
MRF5007 | MOTOROLA |
获取价格 |
N-CHANNEL BROADBAND RF POWER FET | |
MRF5007R1 | MOTOROLA |
获取价格 |
N-CHANNEL BROADBAND RF POWER FET | |
MRF500AMMO | BEL |
获取价格 |
Electric Fuse, Fast Blow, 0.5A, 35A (IR), MICRO, | |
MRF501 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 | |
MRF5015 | FREESCALE |
获取价格 |
N-CHANNEL BROADBAND RF POWER FET | |
MRF5015 | MOTOROLA |
获取价格 |
N-CHANNEL BROADBAND RF POWER FET | |
MRF5015 | NJSEMI |
获取价格 |
FET Transistor | |
MRF502 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 | |
MRF5035 | MOTOROLA |
获取价格 |
N-CHANNEL BROADBAND RF POWER FET |