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MRF492A PDF预览

MRF492A

更新时间: 2024-02-18 15:45:00
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摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
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MRF492A 数据手册

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Order this document  
by MRF492/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for 12.5 volt low band VHF large–signal power amplifier applica-  
tions in commercial and industrial FM equipment.  
Specified 12.5 V, 50 MHz Characteristics —  
Output Power = 70 W  
70 W, 50 MHz  
Minimum Gain = 11 dB  
Efficiency = 50%  
RF POWER  
TRANSISTOR  
NPN SILICON  
Load Mismatch Capability at High Line and RF Overdrive  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
18  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
36  
4.0  
20  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C (1)  
Derate above 25°C  
P
D
250  
1.43  
Watts  
W/°C  
C
CASE 211–11, STYLE 1  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case (2)  
Symbol  
Max  
Unit  
R
0.7  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 100 mAdc, I = 0)  
V
(BR)CEO  
18  
36  
4.0  
20  
Vdc  
Vdc  
C
B
Collector–Emitter Breakdown Voltage (I = 50 mAdc, V  
= 0)  
V
C
BE  
(BR)CES  
(BR)EBO  
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current (V  
CE  
= 13.6 Vdc, V  
= 0)  
I
mAdc  
BE  
CES  
ON CHARACTERISTICS  
DC Current Gain (I = 5.0 Adc, V  
CE  
= 5.0 Vdc)  
h
10  
150  
450  
C
FE  
DYNAMIC CHARACTERISTICS  
Output Capacitance (V  
CB  
= 15 Vdc, I = 0, f = 1.0 MHz)  
C
275  
pF  
E
ob  
FUNCTIONAL TESTS  
Common–Emitter Amplifier Power Gain  
G
11  
50  
13  
dB  
%
PE  
(V  
CC  
= 12.5 Vdc, P  
= 70 W, f = 50 MHz)  
out  
Collector Efficiency  
(V = 12.5 Vdc, P  
η
= 70 W, f = 50 MHz)  
CC  
NOTES:  
out  
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF  
amplifiers.  
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.  
Motorola, Inc. 1994  

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