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by MRF492/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 12.5 volt low band VHF large–signal power amplifier applica-
tions in commercial and industrial FM equipment.
•
Specified 12.5 V, 50 MHz Characteristics —
Output Power = 70 W
70 W, 50 MHz
Minimum Gain = 11 dB
Efficiency = 50%
RF POWER
TRANSISTOR
NPN SILICON
•
Load Mismatch Capability at High Line and RF Overdrive
MAXIMUM RATINGS
Rating
Symbol
Value
18
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
36
4.0
20
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C (1)
Derate above 25°C
P
D
250
1.43
Watts
W/°C
C
CASE 211–11, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
Max
Unit
R
0.7
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 100 mAdc, I = 0)
V
(BR)CEO
18
36
4.0
—
—
—
—
—
—
—
—
20
Vdc
Vdc
C
B
Collector–Emitter Breakdown Voltage (I = 50 mAdc, V
= 0)
V
C
BE
(BR)CES
(BR)EBO
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
Vdc
E
C
Collector Cutoff Current (V
CE
= 13.6 Vdc, V
= 0)
I
mAdc
BE
CES
ON CHARACTERISTICS
DC Current Gain (I = 5.0 Adc, V
CE
= 5.0 Vdc)
h
10
—
—
150
450
—
C
FE
DYNAMIC CHARACTERISTICS
Output Capacitance (V
CB
= 15 Vdc, I = 0, f = 1.0 MHz)
C
275
pF
E
ob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
11
50
13
—
—
—
dB
%
PE
(V
CC
= 12.5 Vdc, P
= 70 W, f = 50 MHz)
out
Collector Efficiency
(V = 12.5 Vdc, P
η
= 70 W, f = 50 MHz)
CC
NOTES:
out
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF492
1