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MRF466

更新时间: 2024-09-23 04:14:39
品牌 Logo 应用领域
ASI 晶体晶体管功率双极晶体管射频放大器局域网
页数 文件大小 规格书
1页 29K
描述
NPN SILICON RF POWER TRANSISTOR

MRF466 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.46Is Samacsys:N
最大集电极电流 (IC):6 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):175 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF466 数据手册

  
MRF466  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L FLG  
The ASI MRF466 is Designed for  
power amplifier applications from 2.0  
to 30MHz.  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
E
C
J
FEATURES:  
.125  
B
E
PG = 15 dB min. at 40 W/30 MHz  
IMD3 = -30 dBc max. at 40 W (PEP)  
Omnigold™ Metalization System  
C
E
D
F
I
H
G
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
IC  
6.0 A  
65 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
VCBO  
VCEO  
PDISS  
TJ  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
35 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
175 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.0 °C/W  
.240 / 6.10  
J
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100 mA  
IC = 100 mA  
IE = 1.0 mA  
VE = 28 V  
35  
V
BVCES  
BVEBO  
ICES  
65  
V
4.0  
V
5
mA  
---  
hFE  
VCE = 5.0 V  
IC = 0.5 A  
10  
80  
Cob  
GPE  
VCB = 28 V  
f = 1.0 MHz  
f = 30 MHz  
125  
19  
200  
pF  
dB  
VCE = 28 V  
ICQ = 20 mA  
15  
40  
POUT = 40 W (PEP)  
η
%
-40  
-30  
IMD3  
dBc  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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