Order this document
by MRF464/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz, in single sideband mobile, marine and base station equipment.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 80 W (PEP)
Minimum Gain = 15 dB
80 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
Efficiency = 40%
Intermodulation Distortion = –32 dB (Max)
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring h
at the
FE
data sheet conditions and color coding the device to predetermined h ranges
FE
within the normal h
FE
limits. A color dot is added to the marking on top of the
cap. Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
35
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
65
4.0
10
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
250
1.4
Watts
W/°C
C
CASE 211–11, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
0.7
Unit
°C/W
In. Lb.
Thermal Resistance, Junction to Case
Stud Torque (1)
R
θJC
—
8.5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
35
65
4.0
—
—
—
—
10
Vdc
Vdc
(BR)CEO
(I = 100 mAdc, I = 0)
C
B
Collector–Emitter Breakdown Voltage
(I = 100 mAdc, V = 0)
V
(BR)CES
(BR)EBO
C
BE
Emitter–Base Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
Vdc
E
C
Collector Cutoff Current
(V = 28 Vdc, V = 0, T = +55°C)
I
mAdc
CES
CE BE
C
ON CHARACTERISTICS
DC Current Gain
(I = 0.5 Adc, V
C CE
h
FE
10
—
—
= 5.0 Vdc)
NOTE:
1. Case 145A–10 — For Repeated Assembly Use 11 In. Lb.
(continued)
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF464
1