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MRF464

更新时间: 2024-11-01 10:47:27
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 41K
描述
NPN SILICON RF POWER TRANSISTOR

MRF464 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):10 A基于收集器的最大容量:200 pF
集电极-发射极最大电压:35 V配置:Single
最小直流电流增益 (hFE):10最高频带:HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF464 数据手册

  
MRF464  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI MRF464 is Designed for 28  
Volt Power Amplifier Applications up to  
30 MHz.  
FEATURES INCLUDE:  
PG = 15 dB Min. @ 30MHz & 80W  
Common Emitter  
PACKAGE STYLE .500" 4L FLANGE  
MAXIMUM RATINGS  
10 A  
65 V  
IC  
VCB  
VCE  
VEB  
PDISS  
TJ  
35 V  
2.5 V  
250 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.7 °C/W  
TSTG  
θJC  
1 = COLLECTOR  
2 = BASE  
3 & 4 = EMITTER  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCES  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100 mA  
IC = 100 mA  
IE = 10 mA  
65  
V
35  
BVCEO  
BVEBO  
ICES  
V
2.5  
V
VCE = 28 V  
VCE = 5.0 V  
VCB = 28 V  
10  
mA  
---  
pF  
IC = 5.0 A  
10  
200  
200  
hFE  
f = 1.0 MHz  
COB  
15  
40  
GPE  
dB  
%
VCC = 28 V  
POUT = 80 W(PEP)  
f = 30.000 & 30.001 MHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. E  
1/1  

MRF464 替代型号

型号 品牌 替代类型 描述 数据表
BLW77 ASI

类似代替

NPN SILICON RF POWER TRANSISTOR
MS1077 MICROSEMI

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