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MRF455 PDF预览

MRF455

更新时间: 2024-11-17 22:51:07
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摩托罗拉 - MOTOROLA 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 79K
描述
RF POWER TRANSISTOR NPN SILICON

MRF455 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.54其他特性:MATCHED PAIR
最大集电极电流 (IC):15 A基于收集器的最大容量:250 pF
集电极-发射极最大电压:18 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:O-CRFM-F4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:175 W最大功率耗散 (Abs):175 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHz

MRF455 数据手册

 浏览型号MRF455的Datasheet PDF文件第2页浏览型号MRF455的Datasheet PDF文件第3页浏览型号MRF455的Datasheet PDF文件第4页 
Order this document  
by MRF455/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for power amplifier applications in industrial, commercial and  
amateur radio equipment to 30 MHz.  
Specified 12.5 Volt, 30 MHz Characteristics —  
Output Power = 60 Watts  
60 W, 30 MHz  
Minimum Gain = 13 dB  
Efficiency = 55%  
RF POWER  
TRANSISTOR  
NPN SILICON  
MATCHING PROCEDURE  
In the push–pull circuit configuration it is preferred that the transistors are  
used as matched pairs to obtain optimum performance.  
The matching procedure used by Motorola consists of measuring h  
at the  
FE  
ranges  
data sheet conditions and color coding the device to predetermined h  
FE  
within the normal h limits. A color dot is added to the marking on top of the cap.  
FE  
Any two devices with the same color dot can be paired together to form a  
matched set of units.  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
Value  
18  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
36  
CES  
EBO  
V
4.0  
15  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
175  
1.0  
Watts  
W/°C  
C
CASE 211–07, STYLE 1  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
1.0  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
18  
36  
Vdc  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 50 mAdc, V = 0)  
V
(BR)CES  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
4.0  
(BR)EBO  
E
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 5.0 Adc, V  
C CE  
h
10  
150  
250  
FE  
= 5.0 Vdc)  
DYNAMIC CHARACTERISTICS  
Output Capacitance  
C
pF  
ob  
(V  
CB  
= 12.5 Vdc, I = 0, f = 1.0 MHz)  
E
(continued)  
Motorola, Inc. 1994  

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