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MRF448

更新时间: 2024-11-17 22:51:07
品牌 Logo 应用领域
泰科 - TE 晶体晶体管
页数 文件大小 规格书
5页 137K
描述
RF POWER TRANSISTOR NPN SILICON

MRF448 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.05
最大集电极电流 (IC):16 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF448 数据手册

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Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MRF448/D  
The RF Line  
NP N S ilic on  
M
R
F
4
4
8
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
Designed primarily for high–voltage applications as a high–power linear  
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.  
Specified 50 Volt, 30 MHz Characteristics  
Output Power = 250 W  
250 W, 30 MHz  
RF POWER  
TRANSISTOR  
NPN SILICON  
Minimum Gain = 12 dB  
Efficiency = 45%  
Intermodulation Distortion @ 250 W (PEP) —  
IMD = –30 dB (Max)  
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR  
CASE 211–11, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
100  
4.0  
16  
Collector Current — Continuous  
Withstand Current — 10 s  
I
C
20  
Total Device Dissipation @ T = 25°C (1)  
P
D
290  
Watts  
C
Derate above 25°C  
1.67  
W/°C  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
–65 to +150  
°C  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
0.6  
°C/W  
θ
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 200 mAdc, I = 0)  
V
(BR)CEO  
50  
Vdc  
Vdc  
C
B
Collector–Emitter Breakdown Voltage (I = 100 mAdc, V = 0)  
V
100  
100  
4.0  
C
BE  
(BR)CES  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 100 mAdc, I = 0)  
V
V
Vdc  
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
Vdc  
E
C
NOTE:  
1. P is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.  
(continued)  
D
1

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